tm april 2013 FDP090N10 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDP090N10 rev. c1 www.fairchildsemi.com 1 FDP090N10 n-channel powertrench ? mosfet 100 v, 75 a, 9 m features ?r ds(on) = 7.2 m ( typ.) @ v gs = 10 v, i d = 75 a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant general description this n-channel mosfet is pr oducedusing fairchild semicon- ductor ? ?s advanced powertrench ? process that has been tai- lored to minimize the on-state resistance while maintaining superior switching performance. applications ? synchronous rectification for atx / server / telecom psu ? battery protection circuit ? motor drives and uninterruptible power supplies ? micro solar inverter to-220 g s d d g s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDP090N10 unit v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 85 o c) 75 a i dm drain current - pulsed (note 1) 300 a e as single pulsed avalanche energy (note 2) 309 mj i ar avalanche current (note 1) 75 a e ar repetitive avalanche energy (note 1) 20.8 mj dv/dt peak diode recovery dv/dt (note 3) 5.6 v/ns p d power dissipation (t c = 25 o c) 208 w - derate above 25 o c1.39w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP090N10 unit r jc thermal resistance, junction to case, max. 0.72 o c/w r cs thermal resistance, case to sink typ. 0.5 r ja thermal resistance, junction to ambient, max. 62.5 *drain current limited by maximum junction temperature
FDP090N10 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2008 fairchild semiconductor corporation FDP090N10 rev. c1 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP090N10 FDP090N10 to-220 - - 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.1-v/ o c i dss zero gate voltage drain current v ds = 100v, v gs = 0v - - 1 a v ds = 100v, v gs = 0v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.53.54.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 7.2 9 m g fs forward transconductance v ds = 10v, i d = 37.5a - 100 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 6185 8225 pf c oss output capacitance - 585 775 pf c rss reverse transfer capacitance - 235 355 pf t d(on) turn-on delay time v dd = 50v, i d = 75a v gs = 10v, r gen = 25 (note 4) - 107 224 ns t r turn-on rise time - 322 655 ns t d(off) turn-off delay time - 166 342 ns t f turn-off fall time - 149 309 ns q g(tot) total gate charge at 10v v ds = 50v, i d = 75a v gs = 10v (note 4) - 89 116 nc q gs gate to source gate charge - 37 - nc q gd gate to drain ?miller? charge - 22 - nc i s maximum continuous drain to source diode forward current - - 75 a i sm maximum pulsed drain to source diode forward current - - 300 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ s -73-ns q rr reverse recovery charge - 166 - nc notes: 1: repetitive rating: pulse width limit ed by maximum junction temperature 2: l = 0.11mh, i as = 75a, v dd = 50v, r g = 25 , starting t j = 25c 3: i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: essentially independent of operating temperature typical characteristics
FDP090N10 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2008 fairchild semiconductor corporation FDP090N10 rev. c1 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 1 10 100 5 0.2 7 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 500 45678 10 100 2 500 25 o c -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test v gs ,gate-source voltage[v] i d ,drain current[a] 0.0 0.5 1.0 1.5 10 100 3 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 500 0 100 200 300 400 0.000 0.005 0.010 0.015 0.020 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0 20406080100 0 2 4 6 8 10 *note: i d = 75a v ds = 25v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 0 1500 3000 4500 6000 7500 9000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30
FDP090N10 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2008 fairchild semiconductor corporation FDP090N10 rev. c1 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 20 40 60 80 100 120 i d , drain current [a] t c , case temperature [ o c ] limited by package 0.1 1 10 100 0.01 0.1 1 10 100 500 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 175 o c r jc = 0.72 o c/w dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.72 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDP090N10 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2008 fairchild semiconductor corporation FDP090N10 rev. c1 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP090N10 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2008 fairchild semiconductor corporation FDP090N10 rev. c1 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP090N10 n-channel powertrench ? mosfet www.fairchildsemi.com 7 ?2008 fairchild semiconductor corporation FDP090N10 rev. c1 mechanical dimensions to-220b03
FDP090N10 n-channel powertrench ? mosfet www.fairchildsemi.com 8 ?2008 fairchild semiconductor corporation FDP090N10 rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devic es or systems without the express written ap proval of fairchild se miconductor corporation. as used here in: 1. life support devices or systems ar e devices or system s which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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